دانلود کتاب حرکت کشش خودروی الکتریکی با استفاده از سوئیچ های هیبریدی Si/SiC

As the world moves towards a more sustainable future, the automotive industry aims to reduce its share of CO2 emissions. Development of Electric Vehicles (EV) has become prominent as they produce sub-stantially lower CO2 emissions than internal combustion engine vehicles. One of the research and development goals in this field is the improvement of the EV traction drive efficiency and the conse-quent extension of driving range. The traction drive, which converts electrical energy from the battery to mechanical energy in the wheels, consists of a DC-AC inverter and an electric motor, as shown in Figure 1.1. The inverter is a major contributor to the power loss of the traction drive Currently, the majority of the commercial EV inverters consist of Silicon (Si)-based IGBTs, which are known for robustness, relatively low cost, and good current conduction performance at high currents. There are, however, several drawbacks of using Si IGBTs in the application of EV drives. Due to the bipolar junction characteristic, IGBTs have unsatisfactory performance at low current conditions. Additionally, in high voltage class devices, the current tail observed during an IGBT’s turn-off may result in high switching losses. In fact, standardized driving cycles demonstrate that consumer EVs operate at low partial load during the majority of its use, and in these operating conditions IGBT-based inverters perform poorly. This calls for a better suited semiconductor than the Si-based IGBTs.
Another candidate for the inverter switch is the Silicon Carbide (SiC) MOSFET. In recent years, it has gained popularity due to its excellent switching performance, easy paralleling feature which enables higher power handling, and above all, the higher temperature capability of the SiC material. The thinner n-doped region of SiC MOSFETs enables wider voltage ranges compared to the Si-based MOSFETs and have lower conduction and switching losses. In particular, high power SiC MOSFETs show outstanding efficiency at low current, which makes them highly suitable for application in an EV traction system from an efficiency standpoint. The major drawback of the SiC MOSFET is its higher manufacturing cost and lower reliability in comparison to the traditional IGBT-based inverters.
The significantly higher cost of the SiC MOSFET calls for a compromised solution. In recent years, the Si IGBT and SiC MOSFET paralleled hybrid switch has shown promising results. In this thesis, this hybrid switch is examined for its performance as the switch for EV traction inverter.