دانلود کتاب مبانی تجهیزات VLSI

The purpose of writing the third edition is to update the book with additional material developed after the completion of the second edition. Key topics added include high-κ gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modeling of MOSFETs, and lateral bipolar transistors on SOI. Furthermore, the chapters of the book have been reorganized to consolidate the discussions of the various subjects to the main chapters with no appendices.