دانلود کتاب مطالعات جنبشی در سیستم GeO2/Ge – گذشته نگر از سال 2021

This book is mainly based on my doctoral dissertation in the Department of Materials Engineering, University of Tokyo from 2008 to 2011. During the period of doctoral study, I followed Professor Akira Toriumi to learn the reaction kinetics in the GeO₂/Ge system. Compared with my dis­sertation, there are some updates in this book, including: 1) research prog­ress achieved after I joined the Institute of Microelectronics of the Chinese Academy of Sciences; 2) new results with new data or figures; and 3) retro­spection on my current opinion in 2021 in terms of “Author’s Note”.

During 2008–2011, Ge was regarded as a promising candidate to replace Si for advanced complementary metal oxide semiconductor (CMOS) devices because of its high mobility. At present (2021), the opinion towards the possibility of using pure Ge as a candidate has already changed. However, as the technology node goes from 22nm to 5nm and beyond, Ge content in the channel is increasing. Therefore, no matter whether pure Ge CMOS could be used or not, studying the most fundamental GeO₂/Ge stack still maintains its value. The kinetic study on GeO₂/Ge is still insuf­ficient to meet the requirement for the control of GeO₂/Ge stacks. This book investigates the reaction kinetics in GeO desorption, GeO₂ crystal­lization, and Ge oxidation in the GeO₂/Ge system, aiming to provide the fundamental idea about the GeO₂/Ge interface and give an answer as to why Ge behaves so differently from Si in principle.